(Senior) Principal Device Engineer (m/f/d) – GaN Power Devices

Nexperia
📍 Manchester, England, United Kingdom 💼 Full time 🕒 Posted July 07, 2026

Job Description

About the Role
Join Nexperia and drive the development of next-generation GaN power devices. In this senior role, you will provide technical leadership in device architecture, simulation, and optimization—translating advanced device physics into high-performance, manufacturable solutions.

What You Will Do

  • Lead device architecture definition and optimization for GaN technologies

  • Own performance targets and balance trade-offs across performance, reliability, and manufacturability

  • Drive TCAD simulation, modeling, and design to support technology and product development

  • Collaborate with cross-functional teams across process, characterization, reliability, and product engineering

  • Support industrialization by delivering robust, scalable device concepts

  • Your Profile

  • Degree (MSc/PhD) or equivalent in semiconductor physics, electrical engineering, or related field

    Ready to Apply?

    Submit your application today and join our talented team at Nexperia.

    Submit Application
  • Job Details

    • Location Manchester, England
    • Job Type Full time
    • Category Engineers
    • Posted Date July 07, 2026
    • Application Deadline August 16, 2026