Principal Medium Voltage Power MOSFET Design Engineer

Renesas
📍 Takasaki, Japan, Japan 💼 Full-time 🕒 Posted June 22, 2026

Job Description

Principal Medium Voltage Power MOSFET Design Engineer

Job Description

**Job Summary:**
We are looking for a highly motivated and skilled engineer to join our Medium Voltage (MV) Power Trench MOSFET Design Team. The successful candidate will play a key role in the design and development of next-generation MV shielded-gate trench MOSFET technologies. This role involves close collaboration with process integration team, application team , marketing team and external foundry partners to drive innovation, optimize performance, and accelerate product industrialization.

**Key Responsibilities:**

+ Define and establish key process modules for next-generation MV shielded-gate trench MOSFET technology
+ Develop TCAD simulation decks and propose advanced device design concepts
+ Analyze wafer-level electrical test results and package-level performance data for each development iteration
+ Lead yield improvement activities and support technology tran...

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Job Details

  • Location Takasaki, Japan
  • Job Type Full-time
  • Category other-general
  • Posted Date June 22, 2026
  • Application Deadline June 27, 2026