Principal Medium Voltage Power MOSFET Design Engineer

Job Summary:

We are looking for a highly motivated and skilled engineer to join our Medium Voltage (MV) Power Trench MOSFET Design Team. The successful candidate will play a key role in the design and development of next-generation MV shielded-gate trench MOSFET technologies. This role involves close collaboration with process integration team, application team , marketing team and external foundry partners to drive innovation, optimize performance, and accelerate product industrialization.

Key Responsibilities:

• Define and establish key process modules for next-generation MV shielded-gate trench MOSFET technology
• Develop TCAD simulation decks and propose advanced device design concepts
• Analyze wafer-level electrical test results and package-level performance data for each development iteration
• Lead yield improvement activities and support technology transfer to mass production<...

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Submit your application today and join our talented team at Renesas Electronics.